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| APT5010B2LC 500V 47A 0.100 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. Lower Gate Charge Faster Switching 100% Avalanche Tested MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current 1 T-MAXTM Y MIN Lower Input Capacitance Easier To Drive Popular TMax Package D G S R All Ratings: TC = 25C unless otherwise specified. A APT5010B2LC UNIT Volts Amps Volts Watts W/C C Amps mJ 500 47 188 30 40 520 4.16 -55 to 150 300 47 50 2500 Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 PR 1 1 Lead Temperature: 0.063" from Case for 10 Sec. (Repetitive and Non-Repetitive) 4 EL IM Gate-Source Voltage Continuous IN TYP MAX UNIT Volts Amps 500 47 0.100 25 250 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-5902 Rev - Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street EUROPE Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 Chemin de Magret DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5010B2LC Test Conditions VDS = 25V f = 1 MHz VGS = 10V VGS = 0V MIN TYP MAX UNIT 5120 1030 190 145 26 73 11 12 30 6 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ID = ID[Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 Y MIN TYP MAX UNIT Amps Volts ns C R A IN 570 11.0 MIN TYP 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) 47 188 1.3 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Ambient EL IM MAX UNIT C/W 0.24 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.26mH, R = 25W, Peak I = 47A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. PR Drain T-MAX Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 0.40 (.016) 0.79 (.031) 050-5902 Rev - Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) |
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